| PART |
Description |
Maker |
| VDS6632A4A-6 VDS6632A4A VDS6632A4A-5 VDS6632A4A-55 |
Synchronous DRAM(512K X 32 Bit X 4 Banks)
Synchronous DRAM(512K X 32 Bit X 4 Banks) 同步DRAM12k × 32的位× 4个银行）
|
A-DATA[A-Data Technology]
ADATA Technology Co., Ltd.
|
| A43E06161V-95UF A43E06161 A43E06161V A43E06161V-75 |
512K X 16 Bit X 2 Banks Synchronous DRAM
|
AMICC[AMIC Technology]
|
| HY57V161610ET-10 HY57V161610ET-15 HY57V161610ET-55 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
Hynix Semiconductor Inc.
|
| M12L64322A-6BIG M12L64322A-6TIG |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| A43L0616A A43L0616AV A43L0616AV-5 A43L0616AV-55 A4 |
512K X 16 Bit X 2 Banks Synchronous DRAM
|
AMICC[AMIC Technology]
|
| M12L64322A-7T M12L64322A-6T |
512K x 32 Bit x 4 Banks Synchronous DRAM
PT 5C 5#16 SKT RECP
|
Electronic Theatre Controls, Inc.
|
| HY57V161610D-I HY57V161610DTC-10I HY57V161610DTC-7 |
SDRAM - 16Mb
2 Banks x 512K x 16 Bit Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
|
| A43L0632G-6F A43L0632G-7F A43L0632G-6UF A43L0632G- |
512K X 32 Bit X 2 Banks Synchronous DRAM 12k × 32位2银行同步DRAM
|
AMIC Technology Corporation
http://
AMIC Technology, Corp.
TM Technology, Inc.
|
| K4R881869 K4R881869M-NCK8 K4R881869M-NBCCG6 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IC42S32202 IC42S32202L IC42S32202L-6BG IC42S32202L |
512K x 32 Bit x 4 Banks (64-MBIT) SDRAM
From old datasheet system
DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| MT6V16M16 MT6V16M18 |
512K x 16 x 32 banks RDRAM(512K x 16 x 32同步动态RAM)
512K x 18 x 32 banks RDRAM(512K x 18 x 32同步动态RAM)
|
Micron Technology, Inc.
|
